HEAT RESISTANT ELECTRODE FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

HEAT RESISTANT ELECTRODE FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide heat resistance against a heat treatment at 300-450 deg.C, and to prevent Au from being peeled off a pad part. SOLUTION: A heat resistant electrode is formed on insulating films 13 and metal silicide layers 11, which are formed on a semiconductor chips 1. An adhered...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NAKAO SHUNJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide heat resistance against a heat treatment at 300-450 deg.C, and to prevent Au from being peeled off a pad part. SOLUTION: A heat resistant electrode is formed on insulating films 13 and metal silicide layers 11, which are formed on a semiconductor chips 1. An adhered metal constituted of a first Ti thin film layer 14a, a barrier metal layer constituted of a TiN thin film layer 15 formed on a first Ti thin film layer 14a, an adhered metal layer constituted of a second Ti thin film layer 14b formed on the TiN thin film layer 15, and an Au thin film layer 16 formed on the second Ti thin film layer 14b are stacked. Wirings 2 and 3 constituted of Au and pads 4 and 5 are provided on the Au thin film layer 16. A TiAu alloy layer is provided between the second Ti thin film layer 14b and the Au thin film layer 16. A TiXNY thin film layer is laid between the first Ti thin film layer 14a and the TiN thin film 15, and the TiXTY thin film layer is laid between the second Ti thin film layer 14b and the TiN thin film layer 15.