FORMATION OF FINE PATTERN

PROBLEM TO BE SOLVED: To easily form a fine pattern by using a resist having a sufficiently low light transmissivity as an anti-reflecting resist and by avoiding coating of the anti-reflecting resist on a pattern positioning mark. SOLUTION: A resist having a sufficiently low light transmissivity is...

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Bibliographische Detailangaben
Hauptverfasser:	TAKEGAWA HIROZO, KURAMASU KEIZABURO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To easily form a fine pattern by using a resist having a sufficiently low light transmissivity as an anti-reflecting resist and by avoiding coating of the anti-reflecting resist on a pattern positioning mark. SOLUTION: A resist having a sufficiently low light transmissivity is used as an anti-reflecting resist of a first underlying layer resist, a positioning mark shield is formed so as to cover a pattern positioning mark formed on a substrate, and then the first resist is applied thereon and dried. Thereafter, the positioning mark shield is removed, the second resist is applied and dried, and then subjected to light exposure.