MANUFACTURE OF SEMICONDUCTOR DEVICE

MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is form...

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1. Verfasser: OGURO SHIZUO
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is formed on the surface of a silicon layer 14 forming metallic silicide film with a high melting temperature such as a TiSi2 , and a titanium film 17 is formed on the silicon film 15, and the silicon film 15 is reacted with the titanium film 17 by a heat treatment to form a TiSi2 film 18. An alloy including a large amount of impurities is formed at the grain boundaries within the TiSi2 film 18 or an interface with silicon through the TiSi2 reaction by means of impurities contained in the silicon film 15. The presence of the alloy including a large mount of impurities at the grain boundaries and the interface prevents the coagulation generated by a high-temperature and long heat treatment to prevent a resistor from increasing.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH11121396A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH11121396A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH11121396A3</originalsourceid><addsrcrecordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhoZGhsaWZo7GxKgBAGjFIvs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>OGURO SHIZUO</creator><creatorcontrib>OGURO SHIZUO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is formed on the surface of a silicon layer 14 forming metallic silicide film with a high melting temperature such as a TiSi2 , and a titanium film 17 is formed on the silicon film 15, and the silicon film 15 is reacted with the titanium film 17 by a heat treatment to form a TiSi2 film 18. An alloy including a large amount of impurities is formed at the grain boundaries within the TiSi2 film 18 or an interface with silicon through the TiSi2 reaction by means of impurities contained in the silicon film 15. The presence of the alloy including a large mount of impurities at the grain boundaries and the interface prevents the coagulation generated by a high-temperature and long heat treatment to prevent a resistor from increasing.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990430&amp;DB=EPODOC&amp;CC=JP&amp;NR=H11121396A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990430&amp;DB=EPODOC&amp;CC=JP&amp;NR=H11121396A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OGURO SHIZUO</creatorcontrib><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is formed on the surface of a silicon layer 14 forming metallic silicide film with a high melting temperature such as a TiSi2 , and a titanium film 17 is formed on the silicon film 15, and the silicon film 15 is reacted with the titanium film 17 by a heat treatment to form a TiSi2 film 18. An alloy including a large amount of impurities is formed at the grain boundaries within the TiSi2 film 18 or an interface with silicon through the TiSi2 reaction by means of impurities contained in the silicon film 15. The presence of the alloy including a large mount of impurities at the grain boundaries and the interface prevents the coagulation generated by a high-temperature and long heat treatment to prevent a resistor from increasing.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhoZGhsaWZo7GxKgBAGjFIvs</recordid><startdate>19990430</startdate><enddate>19990430</enddate><creator>OGURO SHIZUO</creator><scope>EVB</scope></search><sort><creationdate>19990430</creationdate><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><author>OGURO SHIZUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11121396A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OGURO SHIZUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OGURO SHIZUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><date>1999-04-30</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is formed on the surface of a silicon layer 14 forming metallic silicide film with a high melting temperature such as a TiSi2 , and a titanium film 17 is formed on the silicon film 15, and the silicon film 15 is reacted with the titanium film 17 by a heat treatment to form a TiSi2 film 18. An alloy including a large amount of impurities is formed at the grain boundaries within the TiSi2 film 18 or an interface with silicon through the TiSi2 reaction by means of impurities contained in the silicon film 15. The presence of the alloy including a large mount of impurities at the grain boundaries and the interface prevents the coagulation generated by a high-temperature and long heat treatment to prevent a resistor from increasing.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MANUFACTURE OF SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T19%3A24%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OGURO%20SHIZUO&rft.date=1999-04-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH11121396A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true