MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method for preventing a semiconductor device with high resistance, by coagulating metallic silicide film with a high melting temperature such as titanium silicide(TiSi2 ) by a heat treatment process. SOLUTION: An impurity-doped silicon film 15 is formed on the surface of a silicon layer 14 forming metallic silicide film with a high melting temperature such as a TiSi2 , and a titanium film 17 is formed on the silicon film 15, and the silicon film 15 is reacted with the titanium film 17 by a heat treatment to form a TiSi2 film 18. An alloy including a large amount of impurities is formed at the grain boundaries within the TiSi2 film 18 or an interface with silicon through the TiSi2 reaction by means of impurities contained in the silicon film 15. The presence of the alloy including a large mount of impurities at the grain boundaries and the interface prevents the coagulation generated by a high-temperature and long heat treatment to prevent a resistor from increasing.