ENHANCED MAGNETIC FIELD PLASMA-ETCHING REACTOR

PROBLEM TO BE SOLVED: To ensure high etching rate and high uniformity of etching by generating a reactive etching plasma between an electrode and a gas manifold, forming an electrically controlled DC magnetic field, in parallel with the wafer supporting surface of the electrode and varying the magni...

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Bibliographische Detailangaben
Hauptverfasser:	WONG JERRY Y K, CHENG DAVID, ANDREWS DANA L, WANG DAVID NIN-KOU, CHANG MEI, STALDER KENNETH R, MAYDAN DAN, SOMEKH SASSON, WHITE JOHN M, ZEITLIN VLADIMIR J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To ensure high etching rate and high uniformity of etching by generating a reactive etching plasma between an electrode and a gas manifold, forming an electrically controlled DC magnetic field, in parallel with the wafer supporting surface of the electrode and varying the magnitude and direction of magnetic field selectively applied to a wafer on the electrode. SOLUTION: By means of a vertically movable wafer elevating/lowering finger 79, a wafer 75 is picked up from an externally inserted blade 76 and transferred onto a cathode 72. After being processed, the wafer 75 is returned to the blade 76 and taken out to the outside of a chamber. Furthermore, power is supplied from an RF power supply system, and gas plasma for etching is formed from a gas flowing into a processing region. In addition, a large number of pair electromagnets, e.g. four electromagnets 116, 118, 120 and 122, are provided such that they cooperate with two pairs of coil to generate pseudo- electrostatic multi-directional magnetic field around which the wafer is made step movable or rotatable. According to the arrangement, etching is carried out uniformly at high and low voltages and the etching rate can be selected.