PLASMA TREATING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma retreating apparatus capable of improving the reproducibility and stability of the process for the object to be treated of a large diameter by forming uniform plasma stable in the potential over large area. SOLUTION: This plasma treating apparatus is provide...

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Bibliographische Detailangaben
Hauptverfasser:	OMORI TATSUO, NISHIKAWA KAZUYASU, TAKI MASAKAZU, TOMOHISA SHINGO, SHINTANI KENJI, ODERA HIROKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma retreating apparatus capable of improving the reproducibility and stability of the process for the object to be treated of a large diameter by forming uniform plasma stable in the potential over large area. SOLUTION: This plasma treating apparatus is provided with a plasma chamber 2 in which plasma is generated by an exciting source by using gas in a vacuum vessel, a pulse gas valve 8 feeding the gas into the vacuum vessel in a pulse state by a driving device 9, a conductor which constitute a part of the upper part of the plasma chamber 2 and its potentiae is fixed to a certain value, a treating chamber 1 in which a sample 7 is arranged in the vacuum vessel, a partition plate 3 provided in the space between the treating chamber 1 and the plasma chamber 2 and having holes 4 communicating the plasma chamber 2 with the treating chamber 1 and a vacuum evacuating means evacuating the treating chamber 1 and not shown in the fig.