PLASMA TREATMENT SYSTEM

PROBLEM TO BE SOLVED: To suppress the adhesion and deposition of foreign matter such as polymerized coating or the like to a bulkhead board, the hole therein, around a gas feed port and the inside of a feed tube. SOLUTION: This plasma treatment system is provided with a plasma chamber 2 in which pla...

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Bibliographische Detailangaben
Hauptverfasser:	OMORI TATSUO, NISHIKAWA KAZUYASU, TAKI MASAKAZU, TOMOHISA SHINGO, SHINTANI KENJI, ODERA HIROKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To suppress the adhesion and deposition of foreign matter such as polymerized coating or the like to a bulkhead board, the hole therein, around a gas feed port and the inside of a feed tube. SOLUTION: This plasma treatment system is provided with a plasma chamber 2 in which plasma is generated by an exciting source by using gas, a treating chamber 1 in which a sample 7 is arranged, a bulkhead board 3 having a hole 4 provided on the space between the plasma chamber and the treating chamber and communicated from the plasma chamber to the treating chamber, an evacuating means exhausting the treating chamber and gas feeding means 8, 9 and 10 feeding gas to the plasma chamber in a pulse way. In this case, means 14 and 15 holding at least either the bulkhead board or the gas feeding means to a temp. higher than that of the inner wall of the plasma chamber are provided. A means of heating at least either the bulkhead board or the gas feeding means or a means of cooling the plasma chamber is provided.