SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device and method for manufacturing it for preventing crosstalk phenomenon from occurring between wirings because intervals of the wirings is narrowed on account of high integration. SOLUTION: A large number of metal wirings 12a, 12b, and 12c are formed by patterning at specified intervals on an insulating film 11 formed on a semiconductor substrate 10. Since the interval between the metal wirings 12 is equal to or less than submicrons, according to high integration and smaller than the thickness of the wiring layer, parasitic capacitance between wirings increases. A first inter-layer insulating film 13 is formed in a specified thickness on the wiring layer so as not to be buried between the wirings. Further thereon, a crosstalk-preventing conductive layer 14, comprising Al, W and Si, is formed so that the metal wirings 12 are sufficiently buried. Then the conductive layer is selectively etched and flattened, so that the insulating film 13 is exposed, and a second inter-layer insulating film 15 is formed thereon. By adding the conductive layer 14 between the metal wirings 12, crosstalk caused by the parasitic capacity between wirings is prevented.