FIELD-EFFECT TRANSISTOR

FIELD-EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To improve drain withstand-voltage of a compound semiconductor field-effect transistor. SOLUTION: Using an n-GaAs substrate 1, n -GaAs layer 2 and an i-AlGaAs layer 3 are formed on the substrate in this order, and then an n-type transistor is formed on them. An ohmic electrode...

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Bibliographische Detailangaben
1. Verfasser: KANAMORI MIKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve drain withstand-voltage of a compound semiconductor field-effect transistor. SOLUTION: Using an n-GaAs substrate 1, n -GaAs layer 2 and an i-AlGaAs layer 3 are formed on the substrate in this order, and then an n-type transistor is formed on them. An ohmic electrode 9 is formed on the rear surface of the n-GaAs substrate, and it is connected to a drain electrode 8 on the front side. Employing this structure, when drain voltage is built up, the electron also flow to the substrate side at the drain side, and current concentration in an drain area is relaxed. Thereby drain withstand-voltage is improved.