METHOD FOR FORMING BUFFER PAD OF SEMICONDUCTOR MEMORY ELEMENT

PROBLEM TO BE SOLVED: To make it possible to improve transistor characteristics in a nearby circuit region by forming a second insulation film as a sacrificing insulation film on a first insulation film for forming a spacer on a side wall of a gate pattern. SOLUTION: After forming an element separation film 103 and a gate pattern 111 on a semiconductor substrate 101, a first insulation film 113 and a second insulation film 115 are sequentially formed on the whole surface. Next, a second insulation film pattern for exposing the first insulation film 113 of a cell array region is formed, the first insulation film 113 is aeolotropically etched, and a first spacer 113b is formed at the side wall of the gate pattern 111. Next, a conductive film 119 is formed on the whole surface, patterning is performed, and cushion pads 119a and 119b covering the active region between the gate patterns 111 of the cell array region are formed. Next, the second insulation film pattern 115b is removed, exposed first insulation film pattern 113a is aeolotropically etched, and a second spacer 113c is formed on the side wall of the gate pattern 111 in the adjacent circuit region.