METHOD OF FORMING PLATINUM THIN FILM, SUBSTRATE MANUFACTURED BY THE METHOD, ELECTRONIC ELEMENT USING THE SUBSTRATE, AND METHOD OF MANUFACTURING THE ELECTRONIC ELEMENT

PROBLEM TO BE SOLVED: To make it possible to form a platinum film, having mostly prioritized orientation of (200) direction, on an insulation layer oxide. SOLUTION: An insulation oxide film layer 12 is formed on a surface of silicon wafer 11 (step S2). A platinum layer containing oxygen is formed on...

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Bibliographische Detailangaben
Hauptverfasser:	U KENTEI, KIN BUNKO, ZEN TOICHI, BOKU DAIJUN, RI TOSHU, BOKU TOEN, IN GISHUN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To make it possible to form a platinum film, having mostly prioritized orientation of (200) direction, on an insulation layer oxide. SOLUTION: An insulation oxide film layer 12 is formed on a surface of silicon wafer 11 (step S2). A platinum layer containing oxygen is formed on the insulation oxide thin film layer by heating the wafer 11 from the room temperature to 700 deg.C and depositing platinum on the insulation oxide thin film (step S3). The platinum layer is converted to a pure platinum thin layer 15 removing oxygen from the platinum layer by heating the wafer 11 at 400 deg.C-1000 deg.C. The prioritized orientation of (200) direction, expressed by equation, on the pure platinum thin layer 15 is more than 90%.