SEMICONDUCTOR MODULE AND INVERTER DEVICE USING IT

PROBLEM TO BE SOLVED: To enable semiconductor devices to be set substantially uniform in intensity of currents which flow through them and stable in electrical characteristics by a method wherein the semiconductor devices are mounted centering around the joint of the outer connection terminals of a...

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Hauptverfasser: SONOBE YUKIO, OKADA NOBUSUKE, KURIBAYASHI SHIGEHISA, KOIKE YOSHIHIKO, SUZUKI KAZUHIRO, NAKATSU KINYA, SAITO RYUICHI, KOIZUMI MASAHIRO, KAJIWARA RYOICHI, KUSHIMA TADAO, TANAKA AKIRA, KURIHARA YASUTOSHI, INOUE KOICHI, SHIMIZU HIDEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To enable semiconductor devices to be set substantially uniform in intensity of currents which flow through them and stable in electrical characteristics by a method wherein the semiconductor devices are mounted centering around the joint of the outer connection terminals of a wiring circuit where no semiconductor device is mounted so as to be located substantially equal in distance from the above joint. SOLUTION: The joint 7 of emitter wiring pattern terminals is arranged at the center of an emitter wiring pattern located at the center of an insulating board 13. An IGBT semiconductor device 2 and a diode semiconductor device 1 are arranged on an arc around the center of the joint 7. Distances 24 and 25 from the center of the joint 7 to the centers of the nearest and farthest semiconductor device each range within ±20% from the average distance up to a semiconductor device. By this setup, a distance from the electrodes of the IGBT semiconductor device 2 and the diode semiconductor device 1 to the pattern terminal joint 7 can be reduced to a minimum, and distances from the joint 7 to the electrodes can be substantially equalized.