SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method and structure for realizing inter-chip connections in a vertical direction having a mechanical strength, to accommodate a fine pitch in a three-dimensional IC of a thin-film stack type. SOLUTION: A through-hole is made in an insulating film of a semiconductor device 10 previously prepared, a support substrate 4 is bonded to the film with an adhesive, the substrate is polished from its rear side to form a thin film, the thin film is stacked on another device, the support substrate and adhesive layer as upper layers are removed, the adhesive layer is removed by an O2 plasma ashing process with the use of the through-hole as a mask for exposing electrode of the lower layer. The resultant laminate is coated on its entire surface with conductive substance 20 for plating electrode, subjected to a photoresist patterning process for exposing a plating-connection intended area, a plating solution is immersed thereinto while supplying a current to the electrode to form a plated film, the conductive substance layer 20 is etched to establish a plated connection between the electrodes of the upper and lower layers.