ANALOG SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

PROBLEM TO BE SOLVED: To eliminate defective circuit by forming a salicide layer selectively on a dummy upper capacitor electrode and the exposed part of a resistor and electrically coupling the dummy upper capacitor electrode with one stage at the exposed part of the resistor. SOLUTION: An active region A is defined by depositing an field oxide 20 on a semiconductor substrate 10. A gate insulation layer 30 and a gate 41 are formed on the substrate and a poly-resistor 42 is formed on the field oxide 20. Source and drain regions 50a, 50b are then formed in the active region A. Subsequently, an insulation layer 60 for capacitor and an upper capacitor electrode 70 are formed on the poly-resistor 42 and the surface of the gate 41 and the dummy upper capacitor electrode 70 is exposed. Thereafter, a salicide layers 90a-90f are formed selectively in the source and drain regions 50a, 50b, and on the gate 41, the poly-resistor 42 and the dummy upper capacitor electrode 70. Finally, a metallization layer 300 is formed.