SINGLE CRYSTAL SILICON CARBIDE INGOT AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To obtain a good-quality and large-scale single crystal ingot by growing a buffer crystal layer at growth initial period and then growing a crystal which becomes a desired body to prepare ingot. SOLUTION: In this method for producing silicon carbide single crystal using a seed...

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Hauptverfasser:	KATSUNO MASAKAZU, ONOE KOZO, YASHIRO HIROKATSU, KANETANI MASATOSHI, OTANI NOBORU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a good-quality and large-scale single crystal ingot by growing a buffer crystal layer at growth initial period and then growing a crystal which becomes a desired body to prepare ingot. SOLUTION: In this method for producing silicon carbide single crystal using a seed crystal by sublimation method, (a) when 6H type crystal is prepared, growth of silicon carbide single crystal to which nitrogen is added in an amount of 1×10 to 8×10 atoms/cm is carried out as buffer crystal and addition of nitrogen is carried out thereon so as to become desired carrier concentration and 6H type single crystal having a growing layer in which nitrogen addition amount is >=1.5 times based on that of buffer layer and =1×10 atoms/cm and