POLYCRYSTALLINE SEMICONDUCTOR THIN FILM AND FORMING METHOD THEREOF, POLYCRYSTALLINE SEMICONDUCTOR TFT, AND TFT SUBSTRATE

PROBLEM TO BE SOLVED: To form a polycrystalline silicon semiconductor TFT of high performance. SOLUTION: A strip of polycrystalline silicon semiconductor thin film where crystal grains 20 are formed as stripes arranged in the scanning direction of a high-speed annealing beam, wherein an electric fie...

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Bibliographische Detailangaben
Hauptverfasser:	KEYAKIDA MASAYA, MASUSHIGE KUNIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form a polycrystalline silicon semiconductor TFT of high performance. SOLUTION: A strip of polycrystalline silicon semiconductor thin film where crystal grains 20 are formed as stripes arranged in the scanning direction of a high-speed annealing beam, wherein an electric field effect mobility νL in the scanning direction and an electric field effect mobility νs in the widthwise direction of the strip are so set as to satisfy formulas, νL>=1.5.νs and νL->=55cm / V.s respectively, and the channel direction of a TFT is set conforming to the scanning direction of the annealing beam.