PLASMA REACTOR HAVING HEAT SOURCE OF POLYMER HARDENING PRECURSOR MATERIAL

PROBLEM TO BE SOLVED: To reduce the speed of removal of silicon from a collector by supplying the material substance of silicon into a chamber, in addition to the processing gas including etchant and a polymer precursor material, so as to generate plasma, and further, performing the heating of the m...

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Hauptverfasser:	KESWICK PETER, YANG CHAN-LON, RODERICK CRAIG A, MOHN JON, YIN GERALD ZHEYAO, RICE MICHAEL, WONG YUEN-KUI, COLLINS KENNETH S, GROECHEL DAVID W, BUCHBERGER DOUGLAS, MARKS JEFFREY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce the speed of removal of silicon from a collector by supplying the material substance of silicon into a chamber, in addition to the processing gas including etchant and a polymer precursor material, so as to generate plasma, and further, performing the heating of the material substance, and reacting the surface with plasma. SOLUTION: Power source power is applied to an induction coil 18 by an RE power source 24, and also bias power is applied to a wafer pedestal 16 by an RE power source 22, and the treatment gas including etchant and a polymer precursor material is introduced into a reactor chamber 10. Furthermore, in addition to the treatment gas including the etchant and the polymer precursor material, the material substance of silicon or carbon is supplied into the reactor chamber 10 so as to generate plasma within the reactor chamber 10, and concurrently with it, the heating of the material substance is performed to react the surface of the material substance with plasma, by heating a ceiling part with a heat source 36 and also, heating a sidewall 12 with a heat source 32.