CLEANING SOLN. AND CLEANING METHOD USING THE SAME

CLEANING SOLN. AND CLEANING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To prevent the re-deposition of contaminant particles by using a cleaning soln. contg. hydrogen fluoride, alcohol and ioneliminated water in specified vol.% ranges to hold a good profile after cleaning. SOLUTION: Hydrogen fluoride of 0.01-20vol.%, alcohol of 50-99.98vol.% and i...

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Bibliographische Detailangaben
Hauptverfasser: TEI SHOHITSU, BOKU KOSHU, SO ZAIIN, KO EIHAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent the re-deposition of contaminant particles by using a cleaning soln. contg. hydrogen fluoride, alcohol and ioneliminated water in specified vol.% ranges to hold a good profile after cleaning. SOLUTION: Hydrogen fluoride of 0.01-20vol.%, alcohol of 50-99.98vol.% and ion-eliminated water of 0.01-49.9vol.% are used. Alcohol mixes well with water and does not leave residues on the wafer surface. When alcohol is used for cleaning the surface of a polysilicon layer, a very thin alcohol film is formed on the wafer surface to thereby prevent an abrupt growth of an oxide fiber on the polysilicon layer surface and also suppress the re-deposition of contaminants in the air.