SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To prevent the water content from penetrating in a semiconductor element, an insulation layer from cracking at scribing and dusts from being produced. SOLUTION: This process comprises steps a) forming semiconductor elements on a semiconductor substrate, b) forming insulation la...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: KUROKAWA ATSUO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To prevent the water content from penetrating in a semiconductor element, an insulation layer from cracking at scribing and dusts from being produced. SOLUTION: This process comprises steps a) forming semiconductor elements on a semiconductor substrate, b) forming insulation layers 24, 25, 26 on the entire surface, c) forming openings 27 through these layers, d) burying a metal material 29 in the openings 27 to form contact plugs 30, and e) forming a wiring layer 31 connected to the plugs 30 on the insulation films 24-26. The step c) forms grooves 28 into the insulation layers disposed between semiconductor element forming regions and scribing regions. The grooves surround the semiconductor element-forming regions and extend to the surface of the substrate. The step d) includes a step of burying the material 29 in the grooves 28.