SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
PROBLEM TO BE SOLVED: To prevent the water content from penetrating in a semiconductor element, an insulation layer from cracking at scribing and dusts from being produced. SOLUTION: This process comprises steps a) forming semiconductor elements on a semiconductor substrate, b) forming insulation la...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To prevent the water content from penetrating in a semiconductor element, an insulation layer from cracking at scribing and dusts from being produced. SOLUTION: This process comprises steps a) forming semiconductor elements on a semiconductor substrate, b) forming insulation layers 24, 25, 26 on the entire surface, c) forming openings 27 through these layers, d) burying a metal material 29 in the openings 27 to form contact plugs 30, and e) forming a wiring layer 31 connected to the plugs 30 on the insulation films 24-26. The step c) forms grooves 28 into the insulation layers disposed between semiconductor element forming regions and scribing regions. The grooves surround the semiconductor element-forming regions and extend to the surface of the substrate. The step d) includes a step of burying the material 29 in the grooves 28. |
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