ION IMPLANTER

PROBLEM TO BE SOLVED: To provide an ion implanter which decreases the amount of ion collision against an inside wall of a chamber which generates ions and guides an ion beam therefrom having a high ion density and a uniform ion density distribution. SOLUTION: An ion source part of this device compri...

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Bibliographische Detailangaben
1. Verfasser:	KAWASHIMA MASAHITO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an ion implanter which decreases the amount of ion collision against an inside wall of a chamber which generates ions and guides an ion beam therefrom having a high ion density and a uniform ion density distribution. SOLUTION: An ion source part of this device comprises a chamber composed of a first wall and a second wall 42B, which faces to each other, and tubular side walls 42C which connect with the first wall and the second wall 42B. The first wall is configured as a thermoelectron emitting electrode which emits thermoelectrons and the second wall 42B is formed so that an ion-beam guiding exit 43 penetrates the second wall 42B. In the side walls 42C, side wall parts which faces to each other so as to place the ion beam guiding exit 43 therebetween and are adjacent to the ion beam guiding exit 43 are configured as arc discharge electrodes 42C1 which perform arc discharge between themselves and the thermoelectron emitting electrode.