MANUFACTURE OF SEMICONDUCTOR CIRCUIT

PROBLEM TO BE SOLVED: To provide a method for manufacturing an integrated circuit without making a manufacturing process complex and without increasing the number of generated defects. SOLUTION: An insulation layer for constituting a polycrystal Si part that prescribes an opening for forming the gate electrode and the resistor of a MOSTr, a P ion injection 27 with a low amount of concentration for forming a pair of n-type conductive parts 19 and 20 at both sides of a gate thin line part (electrode) 14, and the injection mask of polycrystalline Si including an n-type conductive resistance part 21 due to an opening are formed. Then, a resist insulation layer is formed on an entire structure, an insulation layer is subjected to anisotropic etching so that the region of a substrate without Si mask can be exposed, and the residue of an insulation material remains along the edge part of the gate electrode. For compensating for the elimination of a surface layer from a resistance part due to etching, a dosage amount where the resistance part 21 becomes a scheduled resistance value are subjected to second ion implantation by energy without any substrate mask and without changing resistance values in source and drain of MOSTr.