MANUFACTURE OF ZINC OXIDE THIN FILM, PHOTOSENSOR USING THE SAME AND MANUFACTURE OF SEMICONDUCTOR ELEMENT SUBSTRATE

PROBLEM TO BE SOLVED: To form irregularities on the surface by feeding a current between a conductive substrate and anode electrode both immersed in a water soln., contg. at least Zn ions, ammonia ions and Zn-ammonia complex ions to form a zinc oxide film on the substrate. SOLUTION: A conductive sub...

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Hauptverfasser: SANO MASAFUMI, SONODA YUICHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To form irregularities on the surface by feeding a current between a conductive substrate and anode electrode both immersed in a water soln., contg. at least Zn ions, ammonia ions and Zn-ammonia complex ions to form a zinc oxide film on the substrate. SOLUTION: A conductive substrate 103 is formed as a cathode and a counter electrode as an anode. When a source of complex ions such as Zn ions and excessive ammonia ions uses, e.g. a water soln. of ammonia with zinc hydroxide, the complex ion concn. is set to 0.001-3.0 mol./l with a water soln. pH controlled to be 8-12.5, the temp. is set for over 50 deg.C, and the current density on the surface of the substrate 103 is set to 0.1-100 mA/cm . Generally, the higher ion concn. provides larger grain size of zinc oxide enabling irregularities to be formed on the surface.