POWER SOURCE DEVICE FOR SPUTTERING DEVICE

PROBLEM TO BE SOLVED: To reduce the generation of continuous arc discharge in a sputtering device. SOLUTION: In a circuit, in which a reverse voltage pulse is applied to prevent arc discharge, in the case the generation of arc discharge is detected by an arc discharge detecting means 23 after the co...

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Bibliographische Detailangaben
Hauptverfasser:	KURIYAMA NOBORU, TANITSU YUTAKA, KAWAMATA YOSHIO, FUJII TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce the generation of continuous arc discharge in a sputtering device. SOLUTION: In a circuit, in which a reverse voltage pulse is applied to prevent arc discharge, in the case the generation of arc discharge is detected by an arc discharge detecting means 23 after the completion of the application of the reverse pulse voltage, reverse voltage generated by a reverse voltage generating means 12 is applied to a sputtering source within 1-10 μs to reduce the probability of continuous arc discharge being generated, and, by a diode D10 connected to a sputtering source 14 in a series and a resistance (r) connected in parallel to the diode D10, the electric current at the time of the application of reverse voltage is limited to reduce continuous arc discharge caused by arc discharge in the reverse direction.