METHOD FOR DEPOSITING GOLDEN TITANIUM NITRIDE

PROBLEM TO BE SOLVED: To obtain golden TiN thin film having uniform sheet resistance at a high depositing rate, by increase the exhausting rate in a plasma sputtering chamber, reducing the pressure in the chamber, feeding the chamber with argon at first and then nitrogen having a flow rate higher than that, reducing the flow rate of the gaseous nitrogen and forming TiN under a low pressure of a specified value or below. SOLUTION: For example, for stabilizing the gas in a chamber 170, a gate valve 199 is placed on an intermediate position, a DC power source is regulated to 0 kW, a high frequency power source is regulated to 0 kW, the flow rate of argon is regulated to 15 sccm, and nitrogen is fed to the chamber 170 at 80 sccm for 10 sec. In a primary stage, the DC power source is regulated to 5 kW, the high frequency power source is regulated to 2.5 kW, the position of the gate valve 199 and the flow rate of the gas is held for 5 sec, and nitrogen is filled into the chamber 170. In a secondary stage, the flow rate of the gaseous nitrogen is reduced to 40 sccm. In a state in which the other parameters are held as they are, the pressure in the chamber is reduced to about