MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To make it possible to dope heavily a semiconductor device with electrons without performing a switch back by a method wherein a step of forming low- concentration channel regions under the lower part of a thin dielectric gate, a step in which shallow source regions are formed and are junctioned to the low-concentration channel regions, and the like are conducted in a specified time and at a specified temperature in a method of manufacturing the device. SOLUTION: A method of manufacturing a semiconductor device comprises a step in which high-concentration main body parts are formed of first-concentration carriers, the high-concentration main body parts are enclosed with second-concentration carriers and moreover, low-concentration channel regions are formed under the lower part of a thin dielectric gate. A junction pattern has a channel length 1 which is the distance from the ends of source regions 17 to a base region 14 of a region 13. A drive-in of a P-channel region is conducted in a time range from 60 minutes to 90 minutes at 1175 deg.C. Thereby, a shortened channel length 12 is obtained. The lateral diffusion in P-type diffused layers 14a to 16a is reduced. After that, a wafer is treated so as to make the lives of the carriers annihilate by either of electron irradiation and heavy metal diffusion.