SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To try to decrease parasitic capacitance of gate electrodes and wirings. SOLUTION: A gate electrode 5 is formed, through a gate insulation film 4, on a device separation film oxide 2 formed on a silicon substrate 1. A lightly doped source-drain area 3a is formed by impurity dop...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MOGAMI TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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