MANUFACTURE OF CAPACITOR ELECTRODE CONSISTING OF PLATINUM METAL

PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor electrode requiring no etching method and consisting of a platinum metal, and to use this manufacturing method for the manufacturing process of a cell for a DRAM having a high dielectric or a ferroelectric substance as a memory dielectric. SOLUTION: A support for the capacitor electrode with a silicon-containing surface is formed, and a conductive-electrode base body 10 having the approximately the same shape as the capacitor electrode is formed onto the silicon- containing surface so that the silicon-containing surface adjacent to the base body 10 is exposed. A layer composed of the platinum metal 11 is precipitated on the whole surface, the section of the platinum metal layer placed on the silicon-containing surface is silicified by a thermal process without an etching process, and platinum silicides 11' are removed.