METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To eliminate the formation of a hardly-solubilizing layer in the surface section of a resist pattern by using a surface treatment agent which does not generate any alkali component even when the surface treatment process which is performed for forming a resist film composed of a non-chemically amplified resist. SOLUTION: The surface of a semiconductor substrate is treated with a surface treatment agent containing the silane compound expressed by the formula (where, n, R, and R respectively represent an integer of 1-3, a 1-6C hydrocarbon group, and a 1-6C alkylcarbonyl group, and H, 1-6C saturated hydrocarbon group, a 1-6C unsaturated hydrocarbon group, and a 3-6C alicylic saturated hydrocarbon group). After treatment, a resist film is formed on the surface by applying a non-chemically amplified resist and exposed in a clean room by using a mask having a desired pattern shape. Then a resist pattern is formed by developing the exposed resist film in the clean room.