FORMATION OF PATTERN AND SURFACE-TREATING AGENT
PROBLEM TO BE SOLVED: To improve the adhesion between a semiconductor substrate and a resist pattern by forming a resist film on the surface of the substrate after the surface is treated with a surface treating agent containing a specific silane compound and the resist pattern by exposing and develo...
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| creator | ENDO MASATAKA OSAKI HIROMI |
| description | PROBLEM TO BE SOLVED: To improve the adhesion between a semiconductor substrate and a resist pattern by forming a resist film on the surface of the substrate after the surface is treated with a surface treating agent containing a specific silane compound and the resist pattern by exposing and developing the resist film by using a mask having a desired pattern shape. SOLUTION: The adhesion of the surface of a semiconductor substrate 1 to a resist pattern is improved by making the surface hidrophobic by using the silane compound expressed by the formula as a surface-treating agent. In the formula, R , R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups and R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, OR , 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups. |
| format | Patent |
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SOLUTION: The adhesion of the surface of a semiconductor substrate 1 to a resist pattern is improved by making the surface hidrophobic by using the silane compound expressed by the formula as a surface-treating agent. In the formula, R , R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups and R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, OR , 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981009&DB=EPODOC&CC=JP&NR=H10270306A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981009&DB=EPODOC&CC=JP&NR=H10270306A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ENDO MASATAKA</creatorcontrib><creatorcontrib>OSAKI HIROMI</creatorcontrib><title>FORMATION OF PATTERN AND SURFACE-TREATING AGENT</title><description>PROBLEM TO BE SOLVED: To improve the adhesion between a semiconductor substrate and a resist pattern by forming a resist film on the surface of the substrate after the surface is treated with a surface treating agent containing a specific silane compound and the resist pattern by exposing and developing the resist film by using a mask having a desired pattern shape. SOLUTION: The adhesion of the surface of a semiconductor substrate 1 to a resist pattern is improved by making the surface hidrophobic by using the silane compound expressed by the formula as a surface-treating agent. In the formula, R , R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups and R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, OR , 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB38w_ydQzx9PdT8HdTCHAMCXEN8lNw9HNRCA4NcnN0dtUNCXIFyvu5Kzi6u_qF8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK8AD0MDI3MDYwMzR2Ni1AAABrYmFg</recordid><startdate>19981009</startdate><enddate>19981009</enddate><creator>ENDO MASATAKA</creator><creator>OSAKI HIROMI</creator><scope>EVB</scope></search><sort><creationdate>19981009</creationdate><title>FORMATION OF PATTERN AND SURFACE-TREATING AGENT</title><author>ENDO MASATAKA ; OSAKI HIROMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH10270306A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ENDO MASATAKA</creatorcontrib><creatorcontrib>OSAKI HIROMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ENDO MASATAKA</au><au>OSAKI HIROMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMATION OF PATTERN AND SURFACE-TREATING AGENT</title><date>1998-10-09</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To improve the adhesion between a semiconductor substrate and a resist pattern by forming a resist film on the surface of the substrate after the surface is treated with a surface treating agent containing a specific silane compound and the resist pattern by exposing and developing the resist film by using a mask having a desired pattern shape. SOLUTION: The adhesion of the surface of a semiconductor substrate 1 to a resist pattern is improved by making the surface hidrophobic by using the silane compound expressed by the formula as a surface-treating agent. In the formula, R , R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups and R , R , and R respectively represent the same kind or different kinds of hydrogen atoms, OR , 1-6C substituted or nonsubstituted saturated (or unsaturated) hydrocarbon groups, or 3-6C alicyclic saturated hydrocarbon groups.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | FORMATION OF PATTERN AND SURFACE-TREATING AGENT |
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