MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method with an improved dimensional accuracy when forming a resist layer for patterning on the surface of a semiconductor substrate where a transparent or a translucent layer is formed on a surface with a high reflection factor. SOLUTION: A semiconductor substrate where a transparent layer (CVD oxide film) 2 with a wavelength of λ and a high reflection factor is formed on a substrate with an exposure wavelength λand a surface with a high reflection factor is subjected to patterning by a photolithography technique in a method. In this case, a resist layer 3 with a refractive index of na and a thickness of dr is formed on the transparent layer 2, and an upper-layer reflection prevention film 4 with a refractive index of na and a thickness of da is formed on the resist layer 2. Then, after a resist later 3 is selectively exposed with a beam of a wavelength λ through an upper-layer reflection prevention film, the upper-layer reflection prevention film is eliminated and the latent image of the resist layer is developed. In that case, a light path thickness nada of the upper-layer reflection prevention film and a light path thickness nadr of the resist layer are selected so that the dimensional fluctuation can be reduced.