DEPOSITION METHOD AND DEPOSITION APPARATUS BY CHEMICAL VAPOR PHASE GROWTH

PROBLEM TO BE SOLVED: To provide a deposition method and deposition apparatus by chemical vapor phase growth capable of easily controlling the thicknesses of deposited films, eliminating the unevenness in the film thicknesses by a difference in the positions of substrates to be deposited of the appa...

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Bibliographische Detailangaben
1. Verfasser:	NOHAMA SHIYOUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a deposition method and deposition apparatus by chemical vapor phase growth capable of easily controlling the thicknesses of deposited films, eliminating the unevenness in the film thicknesses by a difference in the positions of substrates to be deposited of the apparatus and the kinds of the films by easy control and easily controlling the thicknesses of arbitrary deposited films. SOLUTION: The distance between a gas supply section 1 for applying gaseous material to the substrates W to be deposited and the substrates to be deposited is made variable at the time of executing film formation by using a chemical vapor phase growth method. The deposition apparatus for executing the film formation by using the chemical vapor growth is provided with mechanisms (mechanisms P1, P1, etc., for pushing up a belt B which is a transporting mechanism) for varying the distance between the gas supply section, such as injector 1, for applying the gaseous materials to the substrates to be deposited and the substrates to be deposited, such as wafers W.