MANUFACTURE OF CAPACITOR OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To manufacture a capacitor, which is provided with electrodes with the widened surface areas and has a large electrostatic capacity, of a semiconductor device by a method wherein the whole surface of a second conductor film deposited on the whole surface of a wafer is etched back and the pattern of an exposed ozone-TEOS USG film is removed. SOLUTION: A first conductor film 13 is made to form on interlayer insulating films 12 and 12', which have a contact hole 11, on a semiconductor substrate 10 and thereafter, an ozone-TEOS USG film is made to form on the film 13. At this time, the surface of the USG film becomes the rough surface of the USG film having a multitude of cavities in the interior thereof. Then, a second conductor film 16 is generally etched back on the USG film in a state that the film 16 is deposited on the whole surface of a wafer and the exposed USG film is removed. Thereby, the formation of a lower electrode completes and bridges of conductor film quality are formed in the interior of a cylinder. As these bridges are complicatedly coupled with each other, the active area of a capacitor is widened to result in increasing the electrostatic capacity of the capacitor.