MANUFACTURE OF CAPACITOR IN SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To increase the thickness of the whole dielectric layer and to prevent the electrostatic capacity of a capacitor from being decreased by a method wherein a high dielectric metallic compound layer is made to interpose between a silicon lower electrode and an upper electrode on the silicon lower electrode and the upper electrode is formed on the metallic compound layer. SOLUTION: A photoresist pattern is removed from a substrate 10 and an HGS layer is formed on the surface of a lower electrode 26. The removal of the photoresist pattern is conducted by a stripping or an ashing. It is preferable that the HGS layer is formed by feeding continuously silicon gas in a furnace in a thermal wall system of a process. This process is executed for widening the charging area of a capacitor to increase the electrostatic capacity of the capacitor without depending upon the characteristics of a dielectric layer. A metal silicide layer 29 is formed on the surface of the electrode 26 on the substrate 10 by a heat-treatment and moreover, a residual metal layer, which is not silicified and is located on the periphery of the electrode 26, is removed by a wet etching, whereby the final lower electrode of the capacitor is formed.