DOUBLE-MASK HERMETIC PASSIVATION METHOD TO GIVE ENHANCED DURABILITY TO MOISTURE

DOUBLE-MASK HERMETIC PASSIVATION METHOD TO GIVE ENHANCED DURABILITY TO MOISTURE

PROBLEM TO BE SOLVED: To manufacturer a modified passivation structure, by a method wherein first and second passivation layers are formed on an integrated circuit and a protective overcoat is formed on the second passivation layer. SOLUTION: A first passivation layer 16 is formed on a substrate 12...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BRYANT FRANK R, CUNNINGHAM JAMES A, SINGH ABHA R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To manufacturer a modified passivation structure, by a method wherein first and second passivation layers are formed on an integrated circuit and a protective overcoat is formed on the second passivation layer. SOLUTION: A first passivation layer 16 is formed on a substrate 12 of an integrated circuit, one part of the layer 16 is removed to allow a pad 10 and soluble links to expose, and a passivation structure is formed. After the circuit is tested and one link or more than one of the links is/are cut, a second passivation layer 32 is further formed on the layer 16 and a protective overcoat 34 is formed on the layer 32. As a result, the modified passivation structure can be manufactured without reducing the reliability.