MAGNETO-RESISTANCE EFFECT ELEMENT

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which is not affected by external magnetic field and can operate stably by forming a bias film, having a new structure such that it makes a switched connection magnetic field hardly affected by an external magnetic field. SOLUTION:...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	OSHIMA NORIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!