MAGNETO-RESISTANCE EFFECT ELEMENT

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which is not affected by external magnetic field and can operate stably by forming a bias film, having a new structure such that it makes a switched connection magnetic field hardly affected by an external magnetic field. SOLUTION:...

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Bibliographische Detailangaben
1. Verfasser:	OSHIMA NORIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which is not affected by external magnetic field and can operate stably by forming a bias film, having a new structure such that it makes a switched connection magnetic field hardly affected by an external magnetic field. SOLUTION: A magnetoresistance effect element 10 is provided basically with an MR film 12, the electric resistance of which changes according to an external magnetic field, a granular film 18 in which ferromagnetic clusters 14 are dispersed in an antiferromagnetic matrix 16 and which works as a bias film for stabilizing the magnetic domain of the MR film 12, and a nonmagnetic film 20, which is interposed between the granular film 18 and MR film 12. The ferromagnetic clusters 14 dispersed in the antiferromagnetic matrix 16 have diameters of several tens of nanometers. The magnetoresistance effect element 10 is formed on a substrate 22.