CAPACITANCE DEVICE AND SEMICONDUCTOR DEVICE, AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a capacitance device which does not cause any reduction in life, and a semiconductor device having this capacitance device. SOLUTION: A dielectric film 4 is provided on a lower electrode 3 made of a metal film, and a second insulating film 5 having a hole 5a opened o...

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Bibliographische Detailangaben
Hauptverfasser: OKU YUUKI, ISHIKAWA TAKAHIDE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a capacitance device which does not cause any reduction in life, and a semiconductor device having this capacitance device. SOLUTION: A dielectric film 4 is provided on a lower electrode 3 made of a metal film, and a second insulating film 5 having a hole 5a opened on the surface of the dielectric film 4 is provided on the dielectric film 4. On the second insulating film 5, a third insulating film 6 is provided which has a hole 6a opened on the surface of the second insulating film 5 with its inner rim surrounding the inner rim of the hole 5a on the surface of the second insulating film 5. In addition, an upper electrode 8 made of a metal film is provided which extends onto the second insulating film 5 through the hole 5a from the surface of the dielectric film 4.