SEMICONDUCTOR MANUFACTURING DEVICE

PROBLEM TO BE SOLVED: To reduce the occurrence of metallic contaminants and particles by forming the facing section of a vacuum treating vessel facing the supporting member of the container and the supporting member of highly pure aluminum or aluminum alloy. SOLUTION: A vacuum treatment container 3...

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Bibliographische Detailangaben
Hauptverfasser: KUDO ATSUSHI, KUNITOMO MASATO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce the occurrence of metallic contaminants and particles by forming the facing section of a vacuum treating vessel facing the supporting member of the container and the supporting member of highly pure aluminum or aluminum alloy. SOLUTION: A vacuum treatment container 3 is constituted of a sidewall 3b provided with a gate valve 11 for carrying in-out a semiconductor wafer 1, a facing section 3a provided with a gas head 9 and constitutes the ceiling wall of the container 3, and a floor section 3c on which a supporting table 5 is positioned. The facing section 3a, sidewall 3b, and floor section 3c are made of highly pure aluminum or aluminum alloy. Therefore, when the wafer 1 is heat-treated, the occurrence of metallic contaminants in the container 3 can be prevented, because the deposition of metallic impurities in the container 3 can be prevented, and, at the same time, the quantity of particles adhering to the wafer 1 can be reduced.