MANUFACTURE OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from t...
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creator | OHIRO MASAHIKO OSAKI HIROTO |
description | PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from the reverse side. SOLUTION: A liquid-shaped polyimide precursor is applied by a spinner so that it becomes flat on the entire surface of a semiconductor wafer 16. After that, the polyimide precursor is cured by a post cure, thus manufacturing the semiconductor wafer 16 that is entirely covered with polyimide including a street. A dicing is transmitted through a silicon part that is the material of the semiconductor wafer 16, for example, by an infrared ray camera from the reverse side of the semiconductor wafer 16, recognizes features inside the semiconductor wafer 16, and feeds a blade while rotating it. The street is a part that does not cause any problems in terms of chip functions and reliability even if the part is lost at the boundary between a semiconductor and a semiconductor element. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH10223571A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH10223571A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH10223571A3</originalsourceid><addsrcrecordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GBkZGxqbmho7GxKgBAGhVIvU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>OHIRO MASAHIKO ; OSAKI HIROTO</creator><creatorcontrib>OHIRO MASAHIKO ; OSAKI HIROTO</creatorcontrib><description>PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from the reverse side. SOLUTION: A liquid-shaped polyimide precursor is applied by a spinner so that it becomes flat on the entire surface of a semiconductor wafer 16. After that, the polyimide precursor is cured by a post cure, thus manufacturing the semiconductor wafer 16 that is entirely covered with polyimide including a street. A dicing is transmitted through a silicon part that is the material of the semiconductor wafer 16, for example, by an infrared ray camera from the reverse side of the semiconductor wafer 16, recognizes features inside the semiconductor wafer 16, and feeds a blade while rotating it. The street is a part that does not cause any problems in terms of chip functions and reliability even if the part is lost at the boundary between a semiconductor and a semiconductor element.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980821&DB=EPODOC&CC=JP&NR=H10223571A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980821&DB=EPODOC&CC=JP&NR=H10223571A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OHIRO MASAHIKO</creatorcontrib><creatorcontrib>OSAKI HIROTO</creatorcontrib><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from the reverse side. SOLUTION: A liquid-shaped polyimide precursor is applied by a spinner so that it becomes flat on the entire surface of a semiconductor wafer 16. After that, the polyimide precursor is cured by a post cure, thus manufacturing the semiconductor wafer 16 that is entirely covered with polyimide including a street. A dicing is transmitted through a silicon part that is the material of the semiconductor wafer 16, for example, by an infrared ray camera from the reverse side of the semiconductor wafer 16, recognizes features inside the semiconductor wafer 16, and feeds a blade while rotating it. The street is a part that does not cause any problems in terms of chip functions and reliability even if the part is lost at the boundary between a semiconductor and a semiconductor element.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GBkZGxqbmho7GxKgBAGhVIvU</recordid><startdate>19980821</startdate><enddate>19980821</enddate><creator>OHIRO MASAHIKO</creator><creator>OSAKI HIROTO</creator><scope>EVB</scope></search><sort><creationdate>19980821</creationdate><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><author>OHIRO MASAHIKO ; OSAKI HIROTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH10223571A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OHIRO MASAHIKO</creatorcontrib><creatorcontrib>OSAKI HIROTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OHIRO MASAHIKO</au><au>OSAKI HIROTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><date>1998-08-21</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from the reverse side. SOLUTION: A liquid-shaped polyimide precursor is applied by a spinner so that it becomes flat on the entire surface of a semiconductor wafer 16. After that, the polyimide precursor is cured by a post cure, thus manufacturing the semiconductor wafer 16 that is entirely covered with polyimide including a street. A dicing is transmitted through a silicon part that is the material of the semiconductor wafer 16, for example, by an infrared ray camera from the reverse side of the semiconductor wafer 16, recognizes features inside the semiconductor wafer 16, and feeds a blade while rotating it. The street is a part that does not cause any problems in terms of chip functions and reliability even if the part is lost at the boundary between a semiconductor and a semiconductor element.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | MANUFACTURE OF SEMICONDUCTOR DEVICE |
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