MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from t...

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Bibliographische Detailangaben
Hauptverfasser: OHIRO MASAHIKO, OSAKI HIROTO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent a crack and a cut-out from being developed when performing the dicing of a semiconductor wafer from a reverse side by adding a coat film to the entire surface of a semiconductor wafer including a street and then performing the dicing of the semiconductor wafer from the reverse side. SOLUTION: A liquid-shaped polyimide precursor is applied by a spinner so that it becomes flat on the entire surface of a semiconductor wafer 16. After that, the polyimide precursor is cured by a post cure, thus manufacturing the semiconductor wafer 16 that is entirely covered with polyimide including a street. A dicing is transmitted through a silicon part that is the material of the semiconductor wafer 16, for example, by an infrared ray camera from the reverse side of the semiconductor wafer 16, recognizes features inside the semiconductor wafer 16, and feeds a blade while rotating it. The street is a part that does not cause any problems in terms of chip functions and reliability even if the part is lost at the boundary between a semiconductor and a semiconductor element.