ION SOURCE OF ION IMPLANTATION DEVICE

PROBLEM TO BE SOLVED: To provide an ion source of an ion implantation device by which the service life of a filament is lengthened and voltage imparted to an extraction electrode can be reduced. SOLUTION: This ion source has a chamber having an opening, a pair of repeller plates 24a opposed to each...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI YASUSHI, HANANO YOJIRO, SATO MITSUO, YABE KAZUO, GUNYASU TAKAHISA, HIROTA MITSUO, MIURA TOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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