ION SOURCE OF ION IMPLANTATION DEVICE

PROBLEM TO BE SOLVED: To provide an ion source of an ion implantation device by which the service life of a filament is lengthened and voltage imparted to an extraction electrode can be reduced. SOLUTION: This ion source has a chamber having an opening, a pair of repeller plates 24a opposed to each...

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Hauptverfasser: TAKAHASHI YASUSHI, HANANO YOJIRO, SATO MITSUO, YABE KAZUO, GUNYASU TAKAHISA, HIROTA MITSUO, MIURA TOSHIHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an ion source of an ion implantation device by which the service life of a filament is lengthened and voltage imparted to an extraction electrode can be reduced. SOLUTION: This ion source has a chamber having an opening, a pair of repeller plates 24a opposed to each other on the inside of this chamber and a filament 27 projecting toward the other repeller plate from one repeller plate 24a, and gas is introduced into the chamber, and an electric current is flowed to the filament 27, and the gas is ionized. In this case, the filament 27 has first and second horizontal parts 29a and 29b projecting to one repeller plate 24a by separating by a prescribed distance and a bridging part 31 to connect tip parts of these first and second horizontal parts 29a and 29b, and a connecting part 34 almost in parallel to a projecting surface of the filament 27 of one repeller plate 24, is arranged in the bridging part 31.