METHOD OF FORMING INTERLAYER INSULATING FILM, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To keep all interlayer insulating film high in burying properties a planarity and to protect an Al wiring against electromigration or cracks by a method wherein insulating films with different stresses are formed on a substrate so as to be well controlled in stress as a whole. SOLUTION: In an experiment where a stress compensation effect is ascertained, one of specimens used in the above experiment is as follows. Insulating films 22a to 22e, 23a to 23d with different stresses are laminated on a substrate 21 so as to be formed into a multilayered structure well regulated in stress as a whole. Through an interlayer insulating film forming method, insulating films of different stresses are formed into a multilayered film well controlled in stress as a whole. Therefore, stress built up in all the multilayered film is regulated to be lower than the critical stress which causes cracking to the insulating film or lower than +3×10 dyne/cm or to be lower than a certain stress which causes warpage to a wafer or a deterioration in characteristics of a semiconductor device.