ALUMINUM NITRIDE MEMBER

PROBLEM TO BE SOLVED: To obtain an AlN member less liable to the reduction of heat conductivity at the joined part, having high bonding strength and suitable for use as a heat radiating member for a semiconductor device. SOLUTION: This AlN member consists of AlN sintered compacts joined to each othe...

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Bibliographische Detailangaben
Hauptverfasser:	TANIGUCHI HITOFUMI, WAKAMATSU TETSUO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY PERFORMING OPERATIONS REFRACTORIES SEMICONDUCTOR DEVICES SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER SLAG TRANSPORTING TREATMENT OF NATURAL STONE WORKING CEMENT, CLAY, OR STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain an AlN member less liable to the reduction of heat conductivity at the joined part, having high bonding strength and suitable for use as a heat radiating member for a semiconductor device. SOLUTION: This AlN member consists of AlN sintered compacts joined to each other and the heat conductivity measured through the joined part 3 is >=95% of that of the sintered compacts. This member has an internal cavity for circulating a refrigerant and the cavity communicates with the outside through two or more openings 2 acting as refrigerant feeding and discharging holes. This member has a recess 4 for mounting a semiconductor device in the surface and may have a metallic layer on the bottom of the recess 4.