MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows the pattern size to be reduced, by expanding the positioning margin for connection holes to a lower wiring layer, thereby realizing a finely formed semiconductor device when the connection holes for connecting an upper and lower wiring layers are bored through a layer insulation film layer. SOLUTION: To form an Si3 N4 film 17 between a first and a second wiring layers 14, 19 and connection holes 27 for exposing the second wiring layer 19, second through fourth SiO2 layer insulation films 20, 23, 25 on the second wiring layer 19 are selectively etched at a selectivity ratio of about 20 to the first film 17. If the opening position of a third connection hole 27 deviates somewhat from the second wiring layer 19, the etching for opening third connection holes 27 is terminated on the second wiring layer 19 and the first Si3 N4 film 17.