METHOD OF EXPOSURE

PROBLEM TO BE SOLVED: To minify dispersion of line widths of chip patterns resulting from the time difference of exposure shot on the same substrate of chemically amplified resist film and to improve chip yield obtained from the periphery of substrate. SOLUTION: Exposure energy is varied for every shot 12-i to compensate the reacting weight between acid and impurity depending on time difference between every exposure shot and the heat treatment on the same substrate, so that acid amounts in the respective shots during heat treatment are made substantially the same. Unless at least one chip pattern in a 12-a shot area is exposed on the resist film 11, the center of exposure is moved by chip pattern unit, for instance, in the x-direction of array direction of a chip pattern so that all the chip patterns can be exposed on the resist film, and all the chip patterns are exposed by masking the chip pattern overlapping the area 12-b already exposed.