PLASMA PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniform processing. SOLUTION: Via a first shield member 160 and a dielectric member 158 in an opening 102b, a substantially circular high-frequency antenna 156 is provided by one round only. A capacitance of a variable capacitor...

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Bibliographische Detailangaben
Hauptverfasser:	KOSHIISHI AKIRA, OYABU ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniform processing. SOLUTION: Via a first shield member 160 and a dielectric member 158 in an opening 102b, a substantially circular high-frequency antenna 156 is provided by one round only. A capacitance of a variable capacitor connected to a grounding side is adjusted such that a serial co-oscillation is generated at a neutral point of this high-frequency antenna 156. With such an arrangement, a desired electric field is generated in a plasma generation space, and a high- density plasma can be generated. A power supply member 126 is formed so as to have a contour in which a sectional shape in that substantially vertical direction is expressed by a given exponential function. Consequently, high-frequency power can be supplied to a top electrode 124 without generating insulation destruction or high-frequency power attenuation or the like.