MANUFACTURE OF SEMICONDUCTOR DEVICE BY USE OF PLASMA

PROBLEM TO BE SOLVED: To realize process conditions high in stability and uniformity by a method wherein a silicon film is formed on a lower layer through a chemical vapor deposition method in a chamber where plasma is generated. SOLUTION: A silicon film 51 doped with no impurities or a small amount of impurities is formed on a specific lower film 50 such as a semiconductor substrate by a vacuum chemical vapor deposition method using a plasma, and an impurity-doped silicon film 52 is continuously deposited thereon in situ system. A deposition process is carried out under the conditions where plasma is added to existing conditions of high-temperature/high-pressure. When plasma is used, the deposition process is enhanced in performance to decompose gas, and impurities contained in the film are easily adjusted and uniformly distributed.