METHOD OF FORMING CONTACT PLUGS OF SEMICONDUCTOR DEVICE HAVING CONTACT HOLES DIFFERENT IN SIZE

PROBLEM TO BE SOLVED: To prevent global steps from growing by forming W plugs in small and large contact holes. SOLUTION: On a semiconductor substrate 1 an oxide film 2 is formed, having contact holes different in size at the upper part. A barrier metal film 3 is formed on the surface of the oxide f...

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Bibliographische Detailangaben
1. Verfasser:	CHO KEISHU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent global steps from growing by forming W plugs in small and large contact holes. SOLUTION: On a semiconductor substrate 1 an oxide film 2 is formed, having contact holes different in size at the upper part. A barrier metal film 3 is formed on the surface of the oxide film 2. A first W film 4 is deposited on the entire surface of the metal film 3 thick enough to fully fill the small contact holes only and a polysilicon film 5 is formed on the first W film 4. A second W film 6 is selectively formed to fully fill the large contact holes only. This prevents global steps from growing to improve the wiring reliability.