METHOD OF FORMING BARRIER METAL FILM

PROBLEM TO BE SOLVED: To provide a method of forming a barrier metal film, which has a low resistivity and can maintain a amorphous state in a heat treatment process. SOLUTION: This forming method comprises the following: a stage 1 for cleaning a semiconductor substrate, a stage 3 for loading the cl...

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Bibliographische Detailangaben
Hauptverfasser:	BOKU SHOSHU, GO ZAIO, RI SONIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of forming a barrier metal film, which has a low resistivity and can maintain a amorphous state in a heat treatment process. SOLUTION: This forming method comprises the following: a stage 1 for cleaning a semiconductor substrate, a stage 3 for loading the cleaned semiconductor substrate in the chamber of a CVD equipment, and a stage 5 for vapor- depositing a metal nitride film on a cleaned semiconductor substrate by injecting a hydrogen plasma and an organic metal compound gas to react in the chamber in which the cleaned semiconductor substrate is loaded.